Integrated circuit including a dummy gate structure and method for the formation thereof
AssigneeGlobalfoundries Inc.
InventorsElliot John Smith, Jan Hoentschel, Nigel Chan, Sven Beyer
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Abstract
An integrated circuit includes a first transistor, a second transistor and a dummy gate structure. The first transistor includes a first gate structure. The first gate structure includes a first gate insulation layer including a high-k dielectric material and a first gate electrode. The second transistor includes a second gate structure. The second gate structure includes a second gate insulation layer including the high-k dielectric material and a second gate electrode. The dummy gate structure is arranged between the first transistor and the second transistor and substantially does not include the high-k dielectric material.
Claims10
An integrated circuit, comprising:
- a first transistor comprising a first gate structure, said first gate structure comprising a first gate insulation layer comprising a high-k dielectric material and a first gate electrode;
- a second transistor comprising a second gate structure, said second gate structure comprising a second gate insulation layer comprising said high-k dielectric material and a second gate electrode;
- and
- a dummy gate structure arranged between said first transistor and said second transistor, wherein said dummy gate structure substantially does not comprise said high-k dielectric material.
Dependencies are inferred from the claim text.