Method of forming a high electron mobility transistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Wei Hsu, Po-Chih Chen, King-Yuen Wong, Jiun-Lei Jerry Yu, Fu-Wei Yao, Chen-Ju Yu
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Abstract
A method of forming a high electron mobility transistor (HEMT) includes forming a second III-V compound layer on a first III-V compound layer, forming a source feature and a drain feature on the second III-v compound layer, depositing a p-type layer on a portion of the second III-V compound layer between the source feature and the drain feature, and forming a gate electrode on the p-type layer. A carrier channel is located between the first III-V compound layer and the second III-V compound layer.
Claims20
A method comprising:
- forming a III-V compound layer over a substrate;
- forming a dielectric layer on the III-V compound layer;
- forming a source/drain feature on the III-V compound layer;
- forming a protection layer on the dielectric layer;
- after forming the protection layer on the dielectric layer, forming a p-type layer on a portion of the III-V compound layer, a portion of the dielectric layer and a portion of the protection layer;
- and
- forming a gate electrode on the p-type layer.
A method comprising:
- forming a first III-V semiconductor material layer over a substrate;
- forming a second III-V semiconductor material layer directly on the first III-V semiconductor material layer;
- forming a dielectric layer over the second III-V semiconductor material layer;
- forming a first trench in the dielectric layer;
- forming a source/drain feature in the first trench;
- forming a protection layer over the dielectric layer;
- forming a second trench extending through the protection layer, the dielectric layer, and to the second III-V semiconductor material layer;
- and
- forming a p-type layer in the second trench such that the p-type layer physically contacts the protection layer, the dielectric layer, and the second III-V semiconductor material layer.
A method comprising:
- forming a first III-V semiconductor material layer over a substrate;
- forming a second III-V semiconductor material layer directly on the first III-V semiconductor material layer;
- forming a dielectric layer over the second III-V semiconductor material layer;
- forming a protection layer over the dielectric layer;
- forming a trench extending through the protection layer, the dielectric layer, and to the second III-V semiconductor material layer;
- and
- forming a p-type layer in the trench such that the p-type layer physically contacts the protection layer, the dielectric layer, and the second III-V semiconductor material layer.
Dependencies are inferred from the claim text.