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US 9,793,367 B2Granted
Ohmic contact to semiconductor
AssigneeSensor Electronic Technology, Inc.
InventorsRemigijus Gaska, Michael Shur
Life of this patent
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Abstract
An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
Claims21
An ohmic contact to a semiconductor layer, the ohmic contact comprising:
- a heterostructure barrier formed on a surface of the semiconductor layer, wherein the heterostructure barrier layer forms a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer, the two dimensional free carrier gas extending along the surface of the semiconductor layer beyond a perimeter of the heterostructure barrier layer;
- and
- a metal layer formed on the heterostructure barrier layer, wherein the metal layer forms a contact with the two dimensional free carrier gas, wherein the metal layer extends directly on all of a top surface and at least one side surface of the heterostructure barrier layer.
A structure comprising:
- a semiconductor layer;
- and
- a set of ohmic contact structures, each ohmic contact structure in the set of ohmic contact structures comprising:
- a heterostructure barrier layer formed on a surface of the semiconductor layer, wherein the heterostructure barrier layer forms a two dimensional free carrier gas for the contact structure at a heterointerface of the heterostructure barrier layer and the semiconductor layer, the two dimensional free carrier gas extending along the surface of the semiconductor layer beyond a perimeter of the heterostructure barrier layer;
- and
- a metal layer located formed on the heterostructure barrier layer, wherein the metal layer forms a contact with the two dimensional free carrier gas, wherein the metal layer extends directly on all of a top surface and at least one side surface of the heterostructure barrier layer.
3 more elements
A method comprising:
- forming an ohmic contact to a semiconductor layer, the ohmic contact comprising:
- a heterostructure barrier formed on a surface of the semiconductor layer, wherein the heterostructure barrier layer forms a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer, the two dimensional free carrier gas extending along the surface of the semiconductor layer beyond a perimeter of the heterostructure barrier layer;
- and
- a metal layer formed on the heterostructure barrier layer, wherein the metal layer forms a contact with the two dimensional free carrier gas, wherein the metal layer extends directly on all of a top surface and at least one side surface of the heterostructure barrier layer.
1 more element
Dependencies are inferred from the claim text.