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US 9,793,362 B2Granted
Semiconductor device having an impurity concentration and method of manufacturing thereof
AssigneeInfineon Technologies AG
InventorHans-Joachim Schulze
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes irradiating the semiconductor body with particles through a first side of the semiconductor body, removing at least a part of impurities from an irradiated part of the semiconductor body by out-diffusion during thermal treatment in a temperature range between 450° C. to 1200° C., and forming a first load terminal structure at the first side of the semiconductor body.
Claims7
A semiconductor device, comprising:
- a silicon body having opposite first and second sides, a first part of the silicon body adjoining the first side and a second part of the silicon body being disposed between the first part and the second side and a transition region between the first and second parts,
- wherein an average concentration of one of nitrogen and carbon in the first part is less than 60% of an average concentration of the one of nitrogen and carbon in the second part;
- wherein a vertical distance between the first side and the second part ranges between 10 μm and 200 μm and wherein a ratio of an average gradient α2 of the concentration of the one of nitrogen and carbon in the transition region and an average gradient α1 of the concentration of the one of nitrogen and carbon in the first part is greater than 3.
Dependencies are inferred from the claim text.