Thin film transistor, array substrate and display device

A thin film transistor comprising a gate electrode, an active layer located over the gate electrode, and a source electrode and a drain electrode respectively located at opposite sides of the active layer and both partially overlapped with the active layer, wherein:

• the active layer includes a plurality of first structure parts and a plurality of second structure parts, a material for each of the first structure parts is a semiconductor, and a material for each of the second structure parts is a predetermined conductor, and the predetermined conductor has better conductivity than a conductivity of the semiconductor, wherein each of the second structure parts is embedded within one of the first structure parts, and each of the first structure parts has at least one of the second structure parts embedded within this first structure part;
• the first structure parts fully envelope the corresponding second structure parts;
• and
• in response to a turn-on voltage being applied to the gate electrode, a conductive passage located between the source electrode and the drain electrode includes the plurality of first structure parts and the plurality of second structure parts.