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US 9,793,356 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong-Ho Yoo, Byeong-Chan Lee, Hyun-Ho Noh, Yong-Kook Park, Bon-Young Koo, Jin-Yeong Joe
Life of this patent
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Abstract
A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.
Claims25
A semiconductor device comprising:
- a substrate provided with first and second active fins that extend lengthwise in a first direction and are separated in a second direction crossing the first direction by a field insulating layer;
- a gate structure which extends in the second direction on the first and second active fins;
- a first semiconductor pattern formed on the first active fin and disposed at a first side of the gate structure, the first semiconductor pattern comprising a first semiconductor material;
- a second semiconductor pattern formed on the second active fin and disposed at the first side of the gate structure, the second semiconductor pattern comprising the first semiconductor material;
- and
- a third semiconductor pattern conformally formed on and extending between a downwardly facing side of the first semiconductor pattern between the first and second active fins and a downwardly facing side of the second semiconductor pattern between the first and second active fins, the third semiconductor pattern comprising a second semiconductor material different from the first semiconductor material.
3 more elements
A semiconductor device comprising:
- first and second active fins which protrude from a substrate, first and second active fins extending in a first direction and separated in a second direction;
- a gate structure which extends in the second direction on the first and second active fins;
- a first semiconductor pattern formed on the first active fin;
- a second semiconductor pattern formed on the second active fin;
- a field insulating layer covering a lower part of both sides of the first and second active fins;
- a third semiconductor pattern formed on and extending from the field insulating layer and contacting the first and second semiconductor patterns in a region between the first and second active fins, the third semiconductor pattern including a first semiconductor material;
- and
- a fourth semiconductor pattern formed on the third semiconductor pattern and on the first and second semiconductor patterns and including a second semiconductor material different from the first semiconductor material of the third pattern.
5 more elements
A semiconductor device, comprising:
- a substrate in which a first region and a second region are defined, the substrate being provided with first and second active fins in the first region and third and fourth active fins in the second region;
- a first gate structure on the first and second active fins;
- a first semiconductor pattern, formed on the first and second active fins, disposed at least at one side of the first gate structure, and including a first semiconductor material;
- a second semiconductor pattern, formed on downwardly facing surfaces of the first semiconductor pattern between the first and second active fins and including a second semiconductor material different from the first semiconductor material;
- a second gate structure on the third and fourth active fins;
- and
- a third semiconductor pattern, formed on the third and fourth active fins, disposed at least at one side of the second gate structure, and including the second semiconductor material.
4 more elements
Dependencies are inferred from the claim text.