Back to results
US 9,793,355 B2Granted
Epitaxial wafer and switch element and light-emitting element using same
AssigneeLG Innotek Co., Ltd.
InventorsSeok Min Kang, Ji Hye Kim, Min Young Hwang
Life of this patent
Estimating the term…
Abstract
An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.
Claims13
An epitaxial wafer comprising:
- a substrate;
- and
- an epitaxial layer on the substrate,
- wherein the epitaxial layer comprises:
- a first semiconductor layer disposed on the substrate and having a first doping concentration;
- a second semiconductor layer disposed on the first semiconductor layer, having a thickness thinner than a thickness of the first semiconductor layer, and having a second doping concentration;
- and
- a third semiconductor layer disposed on the second semiconductor layer, having a thickness thicker than the thickness of the first semiconductor layer, and having a third doping concentration,
- wherein the first doping concentration is in a range of 5×1017/cm3 to 5×1018/cm3,
- wherein the third doping concentration is in a range of 2×1015/cm3 to 7×1015/cm3,
- wherein the second doping concentration is between the first doping concentration and the third doping concentration,
- wherein the second doping concentration is varied in a thickness direction of the second semiconductor layer, and
- wherein the second doping concentration becomes gradually lower from the first semiconductor layer to the third semiconductor layer.
10 more elements
A switch element comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a third semiconductor layer on the second semiconductor layer;
- an anode electrode on the third semiconductor layer;
- and
- a cathode electrode under the substrate,
- wherein the second semiconductor layer has a thickness thinner than a thickness of the first semiconductor layer, and
- wherein the third semiconductor layer has a thickness thicker than the thickness of the first semiconductor layer,
- wherein a first doping concentration of the first semiconductor layer is in a range of 5×1017/cm3 to 5×1018/cm3,
- wherein a third doping concentration of the third semiconductor layer is in a range of 2×1015/cm3 to 7×105/cm3,
- wherein a second doping concentration of the second semiconductor layer is between the first doping, concentration of the first semiconductor layer and the third doping concentration of the third semiconductor layer,
- wherein the second doping concentration of the second semiconductor is varied in a thickness direction of the second semiconductor layer, and
- wherein the second doping concentration of the second semiconductor layer becomes gradually lower from the first semiconductor layer to the third semiconductor layer.
11 more elements
A light emitting element comprising:
- a substrate;
- an epitaxial layer on the substrate;
- and
- a light emitting structure disposed on the epitaxial layer and comprising at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer,
- wherein the epitaxial layer comprises:
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- and
- a third semiconductor layer on the second semiconductor layer,
- wherein the second semiconductor layer has a thickness thinner than a thickness of the first semiconductor layer,
- wherein the third semiconductor layer has a thickness thicker than the thickness of the first semiconductor layer,
- wherein a first doping concentration of the first semiconductor layer is in a range of 5×1017/cm3 to 5×1018/cm3,
- wherein a third doping concentration of the third semiconductor layer is in a range of 2×1015/cm3 to 7×1015/cm3,
- wherein a second doping concentration of the second semiconductor layer is between the first doping concentration of the first semiconductor layer and the third doping concentration of the third semiconductor layer,
- wherein the second doping concentration of the second semiconductor is varied in a thickness direction of the second semiconductor layer, and
- wherein the second doping concentration of the second semiconductor layer becomes gradually lower from the first semiconductor layer to the third semiconductor layer.
13 more elements
Dependencies are inferred from the claim text.