Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo Shimizu, Ryosuke Iijima, Takashi Shinohe
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Abstract
A semiconductor device according to an embodiment includes: a first electrode; a SiC semiconductor layer including n-type semiconductor; and a second electrode including a SiC metallic region made of metal in contact with the SiC semiconductor layer, the SiC metallic region provided on a side of the SiC semiconductor layer opposite to the first electrode, the SiC metallic region containing at least one element selected from the group of Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Sc (scandium), Y (yttrium), La (lanthanum), and lanthanoid (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu).
Claims10
A semiconductor device comprising:
- a first electrode;
- a SiC semiconductor layer including n-type semiconductor;
- and
- a second electrode including a SiC metallic region made of metal in contact with the SiC semiconductor layer, the SiC metallic region provided on a side of the SiC semiconductor layer opposite to the first electrode, the SiC metallic region containing at least one element selected from the group of Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Sc (scandium), Y (yttrium), La (lanthanum), and lanthanoid Ce (Cerium), Pr (Praseodymium), Nd (Neodymium), Pm (Promethium), Sm (Samarium), Eu (Europium), Gd (Gadolinium), Tb (Terbium), Dy (Dysprosium), Ho (Holmium), Er (Erbium), Tm (Thulium), Yb (Ytterbium), and Lu (Lutetium);
- and
- wherein the second electrode further includes a metallic layer of metal different from the SiC metallic region, the SiC metallic region provided between the SiC semiconductor layer and the metallic layer.
A semiconductor device comprising:
- a first electrode;
- a SiC semiconductor layer including n-type semiconductor;
- a second electrode including a SiC metallic region made of metal in contact with the SiC semiconductor layer, the SiC metallic region provided on a side of the SiC semiconductor layer opposite to the first electrode, the SiC metallic region containing at least one element selected from the group of Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Sc (scandium), Y (yttrium), La (lanthanum), and Ce (Cerium), Pr (Praseodymium), Nd (Neodymium), Pm (Promethium), Sm (Samarium), Eu (Europium), Gd (Gadolinium), Tb (Terbium), Dy (Dysprosium), Ho (Holmium), Er (Erbium), Tm (Thulium), Yb (Ytterbium), and Lu (Lutetium);
- and
- wherein the second electrode further includes a metallic layer of metal different from the SiC metallic region, the SiC metallic region provided between the SiC semiconductor layer and the metallic layer
- wherein the SiC metallic region further contains N (nitrogen), P (phosphorus), As (arsenic), or Sb (antimony).
Dependencies are inferred from the claim text.