Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsWanxun He, Su Xing
Life of this patent
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Abstract
A semiconductor device is disclosed, including a plurality of gate rings formed on a substrate and concentrically surrounding a first doped region formed in the substrate. The gate rings are equipotentially interconnected by at least a connecting structure. A second doped region is formed in the substrate, exposed from the space between adjacent gate rings. A third doped region is formed in the substrate adjacent to the outer perimeter of the outermost gate ring. The first doped region, the third doped region and the gate rings are electrically biased and the second doped regions are electrically floating.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first doping region formed in the substrate;
- a plurality of gate rings formed on the substrate, concentrically surrounding the first doping region and spaced apart from each other by a second doping region formed in the substrate and between each two adjacent gate rings, wherein the gate rings are equipotentially interconnected by at least a connecting structure;
- a third doping region formed in the substrate and adjacent to the outer perimeter of the outermost gate ring;
- and
- a guard ring disposed adjacent to the outer perimeter of the third doping region and encompassing the gate rings, wherein the first doping region, the third doping region and the gate rings are electrically connected to respective external bias voltages and the second doping region is electrically floating.
Dependencies are inferred from the claim text.