Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type provided selectively on the first semiconductor region;
• a third semiconductor region of the first conductivity type provided selectively on the second semiconductor region;
• a gate electrode arranged with the second semiconductor region in a second direction, the second direction being perpendicular to a first direction from the first semiconductor region toward the second semiconductor region;
• a gate insulating layer provided between the gate electrode and the first semiconductor region, between the gate electrode and the second semiconductor region, and between the gate electrode and the third semiconductor region;
• a fourth semiconductor region of the second conductivity type provided selectively on the first semiconductor region, the fourth semiconductor region being separated from the second semiconductor region;
• a first conductive unit, at least a portion of the first conductive unit being surrounded with the fourth semiconductor region, wherein a length in the second direction of the first conductive unit is shorter than a length in the second direction of the gate electrode;
• and
• a first insulating layer, at least a portion of the first insulating layer being provided between the first conductive unit and the fourth semiconductor region, a thickness of a portion of the first insulating layer positioned between the first conductive unit and the first semiconductor region in the first direction being thinner than a film thickness of the gate insulating layer.