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US 9,793,337 B2Granted
Integrated circuits and fabrication methods thereof
AssigneeMediatek Inc.
InventorsYuan-Fu Chung, Chu-Wei Hu, Yuan-Hung Chung
Life of this patent
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Abstract
An integrated circuit includes a first polysilicon region having a first grain size formed on a substrate. The integrated circuit also includes a second polysilicon region, having a second grain size different from the first grain size, formed on the substrate. The first polysilicon region is doped with a first dopant of a first conductive type and a second dopant selected from elements of group IIIA and group IVA which has an atomic weight heavier than that of silicon.
Claims21
An integrated circuit, comprising:
- a first polysilicon region, having a first grain size, formed on a substrate;
- and
- a second polysilicon region, having a second grain size different from the first grain size, formed on the substrate, wherein the second grain size is at least 30 Å larger than the first grain size,
- wherein the first polysilicon region is doped with a first dopant of a first conductive type and a second dopant selected from elements of group IIIA and group IVA which has an atomic weight heavier than that of silicon.
1 more element
An integrated circuit, comprising:
- a first polysilicon region including a plurality of polysilicon passive devices, having a first grain size, formed on a substrate;
- and
- a second polysilicon region including a plurality of polysilicon gates, having a second grain size different from the first grain size, formed on the substrate, wherein the second grain size is at least 30 Å larger than the first grain size,
- wherein the first polysilicon region is doped with a second dopant selected from elements of group IIIA and group IVA which has an atomic weight heavier than that of silicon.
1 more element
An integrated circuit, comprising:
- a first polysilicon region, having a first grain size, formed on a substrate;
- and
- a second polysilicon region, having a second grain size different from the first grain size, formed on the substrate, wherein the second grain size is at least 30 Å larger than the first grain size,
- wherein the first polysilicon region is doped with a second dopant selected from elements of group IIIA and group IVA which has an atomic weight heavier than that of silicon.
1 more element
Dependencies are inferred from the claim text.