Light emitting device and method of manufacturing the same

A semiconductor device comprising:

• a first transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer having two channel forming regions;
• a second transistor comprising a second semiconductor layer and a second gate electrode, the second gate electrode being electrically connected to the first semiconductor layer;
• a first conductive layer being electrically connected to the first gate electrode through first and second contact holes;
• a second conductive layer crossing the first conductive layer;
• a third conductive layer being electrically connected to the first semiconductor layer and to the second conductive layer;
• a fourth conductive layer being electrically connected to the second semiconductor layer, the fourth conductive layer being parallel to the first conductive layer;
• and
• a capacitor comprising a part of the second gate electrode,
• wherein at least one of the first conductive layer and the fourth conductive layer has a region wider than a width of the second conductive layer.

A semiconductor device comprising:

• a first transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer having two channel forming regions;
• a second transistor comprising a second semiconductor layer and a second gate electrode, the second gate electrode being electrically connected to the first semiconductor layer;
• a first conductive layer being electrically connected to the first gate electrode through first and second contact holes;
• a second conductive layer crossing the first conductive layer;
• a third conductive layer being electrically connected to the first semiconductor layer and to the second conductive layer;
• a fourth conductive layer being electrically connected to the second semiconductor layer, the fourth conductive layer being parallel to the first conductive layer;
• and
• a capacitor comprising a part of the second gate electrode,
• wherein a channel width of the second transistor is wider than that of the first transistor.

A semiconductor device comprising:

• a first transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer having two channel forming regions;
• a second transistor comprising a second semiconductor layer and a second gate electrode, the second gate electrode being electrically connected to the first semiconductor layer;
• a first conductive layer being electrically connected to the first gate electrode through first and second contact holes;
• a second conductive layer crossing the first conductive layer;
• a third conductive layer being electrically connected to the first semiconductor layer and to the second conductive layer;
• a fourth conductive layer being electrically connected to the second semiconductor layer, the fourth conductive layer being parallel to the first conductive layer;
• and
• a capacitor comprising a part of the second gate electrode,
• wherein the first and second contact holes are aligned parallel to a direction of which the fourth conductive layer extends.