Imaging apparatus, imaging system and manufacturing method of imaging apparatus
AssigneeCanon Kabushiki Kaisha
InventorMahito Shinohara
Life of this patent
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Abstract
One embodiment provides an imaging apparatus including a photoelectric conversion unit; and a junction type field effect transistor configured to output a signal based on a carrier generated by the photoelectric conversion unit. The junction type field effect transistor includes a semiconductor region of a first conductivity type that forms a channel and a gate region of a second conductivity type. The semiconductor region of the first conductivity type includes a first region and a second region. The first region and the second region are disposed in this order toward a direction to which a carrier in the channel drifts. An impurity density of the second region is lower than an impurity density of the first region.
Claims12
An imaging apparatus comprising:
- a photoelectric conversion unit;
- a junction type field effect transistor configured to output a signal based on a carrier generated by the photoelectric conversion unit;
- and
- a semiconductor substrate where the photoelectric conversion unit and the junction type field effect transistor are provided,
- wherein
- the junction type field effect transistor includes a semiconductor region of a first conductivity type that forms a channel and a gate region of a second conductivity type,
- the semiconductor region of the first conductivity type includes a first region and a second region, the first region and the second region being disposed in this order toward a direction to which a carrier in the channel drifts,
- an impurity density of the second region is lower than an impurity density of the first region, and
- an orthogonal projection of the first region onto a plane parallel to a surface of the semiconductor substrate overlaps with an orthogonal projection of the gate region onto the plane.
An imaging apparatus comprising:
- a photoelectric conversion unit;
- and
- a junction type field effect transistor configured to output a signal based on a carrier generated by the photoelectric conversion unit,
- wherein
- the junction type field effect transistor includes a channel region of a first conductivity type, a source region of the first conductivity type, a drain region of the first conductivity type and a gate region of a second conductivity type,
- the channel region includes a first region and a second region, the first region and the second region being disposed in this order from the source region to the drain region,
- an impurity density of the second region is lower than an impurity density of the first region,
- the gate region includes a surface gate region and a buried gate region disposed at different depths from each other, and
- the channel region is disposed between the surface gate region and the buried gate region.
Dependencies are inferred from the claim text.