Thin film transistor and circuit structure

A circuit structure, comprising a thin film transistor (TFT), the TFT comprising a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer;

• wherein the TFT further comprises a stopping structure arranged over the etch stop layer;
• the stopping structure is electrically isolated from the source electrode and the drain electrode;
• and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer;
• wherein the stopping structure is made of conductive metal;
• the stopping structure is located within an area between the source electrode and the drain electrode;
• and
• the stopping structure is spaced from both of the source electrode and the drain electrode;
• wherein the circuit structure further comprises a capacitor structure comprising a first polar plate and a second polar plate which is formed by the gate electrode of the TFT, and the first polar plate is arranged at a layer identical to the source electrode and the drain electrode of the TFT and connected to the drain electrode of the TFT;
• wherein the circuit structure is a shift register unit;
• the source electrode and the drain electrode of the TFT are connected to a signal input node and a signal output node, respectively;
• the gate electrode of the TFT is connected to a pull-up node;
• and
• one end of the capacitor structure is connected to the pull-up node, and the other end of the capacitor structure is connected to the signal output node.