Method of manufacturing a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Jin Shin, Hong-Suk Kim, Jung-Hwan Kim, Sang-Hoon Lee, Hun-Hyeong Lim, Yong-Seok Cho, Young-Dae Kim, Han-Vit Yang
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Abstract
A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed;
- forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern;
- and
- deoxidizing the metal oxide layer to convert the metal oxide layer into a metal of the metal pattern by moving oxygen from the metal oxide layer to the preliminary buffer oxide layer such that the preliminary buffer oxide layer is transformed into a buffer oxide layer.
A method of manufacturing a semiconductor device, the method comprising:
- alternately and repeatedly forming insulating interlayers and sacrificial layers on a substrate;
- forming a plurality of channel structures through the insulating interlayers and sacrificial layers;
- etching the insulating interlayers and sacrificial layers between the channel structures to form an opening exposing an upper surface of the substrate;
- replacing the sacrificial layers exposed by the opening with gate lines, respectively, to form a structure, each of the gate lines including a metal;
- forming a preliminary buffer oxide layer on a sidewall and a top surface of the structure and the upper surface of the substrate exposed by the opening;
- performing a plasma treatment on the preliminary buffer oxide layer to form a buffer oxide layer;
- and
- partially etching the buffer oxide layer to form a buffer oxide pattern covering a least each of the gate lines.
A method of manufacturing a semiconductor device, the method comprising:
- forming a plurality of pad patterns and a first insulating interlayer filling a gap between the pad patterns on a substrate;
- forming a second insulating interlayer on the first insulating interlayer, the second insulating interlayer including an opening exposing a portion of a surface of the pad pattern;
- forming a preliminary buffer oxide layer on a top surface of the second insulating interlayer, a sidewall of the opening, and the surface of the pad pattern exposed by the opening;
- performing a plasma treatment on the preliminary buffer oxide layer to transform a portion of the preliminary buffer oxide layer into a buffer oxide layer;
- etching the buffer oxide layer to form a buffer oxide pattern exposing the pad pattern;
- and
- wet cleaning the buffer oxide pattern to remove the preliminary buffer oxide,
- wherein:
- the plasma treatment is performed so that a first portion of the preliminary buffer oxide layer is transformed into a buffer oxide layer and a second portion of the preliminary buffer oxide layer remains,
- the first portion of the preliminary buffer oxide layer is higher than a top surface of the pad pattern, and
- the second portion of the preliminary buffer oxide layer is lower than a top surface of the pad pattern.
Dependencies are inferred from the claim text.