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US 9,793,277 B2Granted
Method of maintaining the state of semiconductor memory having electrically floating body transistor
AssigneeZeno Semiconductor, Inc.
InventorsYuniarto Widjaja, Zvi Or-Bach
Life of this patent
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Abstract
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
Claims18
An integrated circuit comprising:
- an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
- said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
- a first bipolar device having a first floating base region, a first emitter, and a first collector;
- and
- a second bipolar device having a second floating base region, a second emitter, and a second collector;
- wherein said first floating base region is common to said second floating base region,
- wherein said first collector is common to said second collector,
- wherein a state of said memory cell is maintained through a back-bias applied to said first and second collectors,
- wherein said first and second collectors are commonly connected to at least two of said memory cells;
- and
- a control circuit configured to provide electrical signals to said first and second collectors.
8 more elements
An integrated circuit comprising:
- an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
- said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
- a floating body region configured to be charged to a level indicative of a state of the memory cell;
- a first region in electrical contact with said floating body region;
- a second region in electrical contact with said floating body region and spaced apart from said first region;
- and
- a control circuit configured to provide electrical signals to at least two of said memory cells, wherein said control circuit is commonly connected to at least two of said memory cells, and when a first memory cell of said at least two of said memory cells is in a first state and a second memory cell of said at least two of said memory cells is in a second state, application of electrical signals via said control circuit maintains said first memory cell in said first state and said second memory cell in said second state.
4 more elements
An integrated circuit comprising:
- an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
- said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
- a first bipolar device having a first floating base region, a first emitter, and a first collector;
- and
- a second bipolar device having a second floating base region, a second emitter, and a second collector;
- wherein said first floating base region is common to said second floating base region;
- wherein said first collector is common to said second collector;
- wherein a state of said memory cell is maintained through a back-bias applied to said first and second collectors;
- and
- wherein said first and second collectors are commonly connected to at least two of said memory cells;
- a first control circuit configured to provide electrical signals to said first and second collectors to maintain a state of said memory cell;
- a second control circuit configured to perform read operations of said memory cell;
- and
- wherein states of said memory cells are maintained upon repeated read operations.
11 more elements
Dependencies are inferred from the claim text.