Semiconductor device having gate structure with reduced threshold voltage and method for manufacturing the same
AssigneeUnited Microelectronics Corp.
InventorsWei-Hsin Liu, Pi-Hsuan Lai
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided, including: a substrate having a first area and a second area; several first gate structures formed at the first area, and at least one of the first gate structures including a first hardmask on a first gate, and the first gate structure having a first gate length; several second gate structures formed at the second area, and at least one of the second gate structures including a second hardmask on a second gate, and the second gate structure having a second gate length. The first gate length is smaller than the second gate length, and the first hardmask contains at least a portion of nitrogen (N2)-based silicon nitride (SiN) which is free of OH concentration.
Claims16
A semiconductor device, comprising:
- a substrate having a first area and a second area;
- a plurality of first gate structures formed at the first area, and at least one of the plurality of first gate structures comprising a first hardmask on a first gate, and the first gate structure having a first gate length;
- a plurality of second gate structures formed at the second area, and at least one of the plurality of second gate structures comprising a second hardmask on a second gate, and the second gate structure having a second gate length;
- wherein the first gate length is smaller than the second gate length, and the first hardmask comprises at least a portion of nitrogen(N2)-based silicon nitride (SiN) which is free of OH concentration, and the second hardmask on the second gate has higher OH concentration than the first hardmask on the first gate.
Dependencies are inferred from the claim text.