Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a front surface electrode provided on a front surface of the semiconductor substrate;
• and
• a rear surface electrode provided on a rear surface of the semiconductor substrate,
• wherein
• a first boundary trench, a first trench, a second boundary trench, and a second trench are provided in the front surface, the first trench extends along the first boundary trench, the second boundary trench is provided on a side opposite to the first trench with the first boundary trench interposed in between the second boundary trench and the first trench, and extends along the first boundary trench, and the second trench is provided on a side opposite to the first boundary trench with the second boundary trench interposed in between the second trench and the first boundary trench, and extends along the first boundary trench,
• the semiconductor substrate comprises a first IGBT region, a diode region, and a second IGBT region, the first IGBT region is located between the first trench and the first boundary trench, the diode region is located between the first boundary trench and the second boundary trench, and the second IGBT region is located between the second trench and the second boundary trench,
• a gate insulating film and a gate electrode insulated from the semiconductor substrate by the gate insulating film are provided in each of the first trench and the second trench,
• an interlayer insulating film is each provided between each of the gate electrodes and the front surface electrode,
• an insulating layer is provided in each of the first boundary trench and the second boundary trench,
• an emitter region and a body region are provided in each of the first IGBT region and the second IGBT region, each of the emitter regions is of n-type and in contact with the front surface electrode and the corresponding gate insulating film, and each of the body regions is of p-type, in contact with the front surface electrode, and in contact with the corresponding gate insulating film on a rear surface side of the emitter region,
• each of the body regions comprises a body contact portion being in contact with the front surface electrode and having a p-type impurity density equal to or higher than 1×1018 atoms/cm3 at the front surface,
• an anode region of p-type being in contact with the front surface electrode is provided in the diode region,
• the anode region comprises an anode contact portion being in contact with the front surface electrode and having a p-type impurity density equal to or higher than 1×1018 atoms/cm3 at the front surface,
• an n-type region extending across the first IGBT region, the second IGBT region and the diode region is provided in a region located on rear surface sides of the anode region and each of the body regions,
• the n-type region is in contact with the rear surface electrode in at least a part of the diode region,
• a collector region of p-type being in contact with the rear surface electrode is provided each of at least a part of a region located on a rear surface side of the n-type region in the first IGBT region and at least a part of a region located on a rear surface side of the n-type region in the second IGBT region,
• an interval between the first boundary trench and the second boundary trench is equal to or longer than 200 μm, and
• an area ratio of the anode contact portion occupying the front surface in the diode region is lower than each of an area ratio of the body contact portion occupying the front surface in the first IGBT region and an area ratio of the body contact portion occupying the front surface in the second IGBT region.