Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same

A method of forming a semiconductor device, comprising:

• (a) preparing a semiconductor wafer having a semiconductor device forming region,
• wherein the semiconductor device forming region includes a first long side, a second long side located on the opposite side of the first long side, a first short side and a second short side located on the opposite side of the first short side,
• wherein a schottky barrier diode is formed in a first region of the semiconductor device forming region and includes an anode and a cathode,
• wherein a plurality of power MOSFETs are formed in a plurality of second regions of the semiconductor device forming region and respectively include a gate electrode, a source region and a drain region,
• (b) forming an insulating film over the semiconductor device forming region;
• (c) forming a metal layer over the insulating film;
• and
• (d) forming a first metal layer and a second metal layer by patterning the metal layer;
• wherein the first region is arranged between the first long side and the second long side,
• wherein the plurality of second regions are arranged along the first long side, and are arranged between the first long side and the first region,
• wherein the first metal layer is connected to the gate electrodes, and includes a first finger portion and a second finger portion,
• wherein the first finger portion extends along the first long side, and the second finger portion extends along the first short side and the second finger portion is arranged between the plurality of second regions,
• wherein the second metal layer is connected to the source regions in the plurality of second regions and the anode in the first region, and
• wherein a first length of the first region along the first long side is larger than a second length of the first region along the first short side.