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US 9,793,263 B1Granted
Digital alloy FinFET co-integrated with passive resistor with good temperature coefficient
AssigneeInternational Business Machines Corporation
InventorsKarthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari, Alexander Reznicek
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Abstract
A method for integrating fin field effect transistors (FinFETs) and resistors on a common substrate is provided. By employing a digital alloy as a channel material for each FinFET and as a resistor body for each resistor, FinFETs with improved charge carrier mobility, and resistors with good temperature coefficient of resistance are obtained.
Claims20
A semiconductor structure comprising:
- a fin field effect transistor (FinFET) located in a first region of a substrate and comprising:
- a digital alloy channel portion comprising alternating sublayers of a first semiconductor material and a second semiconductor material different from the first semiconductor material, and
- source/drain regions laterally surrounding the digital alloy channel portion;
- and
- a resistor located in a second region of the substrate and comprising:
- a digital alloy resistor body portion comprising alternating sublayers of the first semiconductor material and the second semiconductor material, and
- semiconductor resistor contact portions laterally surrounding the digital alloy resistor body portion.
4 more elements
A method of forming a semiconductor structure comprising:
- forming a fin field effect transistor (FinFET) in a first region of a substrate and a resistor in a second region of the substrate,
- wherein the FinFET comprises:
- a digital alloy channel portion comprising alternating sublayers of a first semiconductor material and a second semiconductor material different from the first semiconductor material, and
- source/drain regions laterally surrounding the digital alloy channel portion;
- and
- wherein the resistor comprises:
- a digital alloy resistor body portion comprising alternating sublayers of the first semiconductor material and the second semiconductor material, and
- semiconductor resistor contact portions laterally surrounding the digital alloy resistor body portion.
5 more elements
Dependencies are inferred from the claim text.