Power semiconductor device

A control circuit comprising:

• a first power semiconductor device which includes;
• a first MOSFET having a first conductivity type including a first source, a first drain, and a first gate,
• a second MOSFET having a first conductivity type including a second drain, a second source electrically coupled to the first source as a first common source, and a second gate electrically coupled to the first gate as a first common gate, and
• a first diode coupled between the first and second drains,
• the first MOSFET includes a first parasitic diode between the first common source and the first drain and the second MOSFET includes a second parasitic diode between the first common source and the second drain, the first and the second parasitic diodes have a rectification direction from the first common source to the drains respectively;
• and
• a second power semiconductor device which includes;
• a third MOSFET having a first conductivity type including a third source, a third drain, and a third gate,
• a fourth MOSFET having a second conductivity type including a fourth drain, a fourth source electrically coupled to the third source as a second common source, and a fourth gate electrically coupled to the third gate as a second common gate, and
• a second diode coupled between the third and fourth drains,
• the third MOSFET includes a third parasitic diode between the second common gate and the third drain and the fourth MOSFET includes a fourth parasitic diode between the second common source and the fourth drain, the third and fourth parasitic diodes have a rectification direction from the second common source to the drains respectively;
• wherein breakdown voltage of the first MOSFET is higher than that of the second MOSFET and breakdown voltage of the third MOSFET is higher than that of the fourth MOSFET.