Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)

A method for manufacturing a transient voltage suppressing (TVS) device comprising:

• a) growing a first lightly doped epitaxial layer of a first conductivity type on top of a heavily doped substrate of the first conductivity type followed by applying a first implant mask to implant a buried region of a second conductivity type followed by applying a second implanting mask to form a deep voltage breakdown (VBD) trigger implant layer of the first conductivity type underneath the buried region;
• b) growing a second epitaxial layer of the first conductivity type on top of the first epitaxial layer followed by applying a trench mask to open isolation trenches and filling the isolation trenches with an insulation material to separate the first and second epitaxial layers of the first conductivity type into at least two mutually isolated first epitaxial region and a second epitaxial region wherein the first epitaxial region encompasses the buried region of the second conductivity type and the deep VBD trigger implant layer;
• and
• c) applying a third implant mask to implant a first top source region in the first epitaxial region and a second top source region in the second epitaxial region wherein the second epitaxial layer in the first epitaxial region interfacing with the buried region of the second conductivity type forming a high-side steering diode of the TVS device on top of a Zener diode formed between the buried region of the second conductivity type interfacing the first epitaxial layer of the first conductivity type;
• and wherein the top source region of the second conductivity type in the second epitaxial region interfaced with the second epitaxial layer of the first conductivity type forming a low-side steering diode of the TVS device.