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US 9,793,255 B2Granted
Power semiconductor device including a cooling material
AssigneeInfineon Technologies AG
InventorsJoachim Mahler, Ralf Otremba, Hans-Joachim Schulze, Guenther Ruhl, Hans-Joerg Timme
Life of this patent
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Abstract
A power semiconductor device includes a wiring structure adjoining at least one side of a semiconductor body and comprising at least one electrically conductive compound. The power semiconductor device further includes a cooling material in the wiring structure. The cooling material is characterized by a change in structure by means of absorption of energy at a temperature TC ranging between 150° C. and 400° C.
Claims25
A power semiconductor device, comprising:
- a wiring structure adjoining at least one side of a semiconductor body and comprising at least one electrically conductive compound;
- a cooling material in the wiring structure, the cooling material being characterized by a change in structure by means of absorption of energy at a temperature TC ranging between 150° C. and 400° C., and
- wherein a rear side of the semiconductor body is mounted to a lead frame, and the cooling material adjoins at least one of a front side wiring layer of the wiring structure and a rear side contact material electrically coupling the semiconductor body and the lead frame.
Dependencies are inferred from the claim text.