TVS structures for high surge and low capacitance
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsMadhur Bobde, Wenjiang Zeng, Limin Weng
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Abstract
A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.
Claims15
A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate, and the TVS device further comprising:
- a plurality of contact trenches opened and extended into the epitaxial layer of the first conductivity type wherein the contact trenches are filled with a doped polysilicon layer of a second conductivity type and wherein the contact trenches are further surrounded by a heavy dopant region of the second conductivity type to form a P-N junction with the epitaxial layer of the first conductivity type;
- and
- a metal contact layer disposed on a top surface of the epitaxial layer of the first conductivity type electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.
Dependencies are inferred from the claim text.