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US 9,793,239 B2Granted
Semiconductor workpiece with selective backside metallization
AssigneeAdvanced Micro Devices, Inc.
InventorsMichael Z. Su, Michael S. Alfano, Bryan Black
Life of this patent
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Abstract
Various semiconductor workpieces with selective backside metallizations and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor workpiece that has multiple dies. A backside metallization is fabricated on a first die of the dies but not on a second die of the dies.
Claims22
A method of manufacturing, comprising:
- providing a semiconductor workpiece having multiple full dies;
- and
- fabricating a backside metallization on a first die of the full dies but not on a second die of the full dies.
A method of manufacturing, comprising:
- providing a semiconductor workpiece having multiple full dies;
- fabricating a backside metallization on a first die of the full dies but not on a second die of the full dies;
- and
- singulating the first die and the second die.
1 more element
A method of manufacturing, comprising:
- providing a semiconductor workpiece having multiple full dies;
- and
- fabricating a first type of backside metallization on a first die of the full dies and a second type of a backside metallization on a second die of the full dies.
Dependencies are inferred from the claim text.