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US 9,793,233 B2Granted
Forming sacrificial composite materials for package-on-package architectures and structures formed thereby
AssigneeIntel Corporation
InventorsRajasekaran Swaminathan, Leonel R. Arana, Yoshihiro Tomita, Yosuke Kanaoka
Life of this patent
Estimating the term…
Abstract
Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.
Claims19
A structure comprising:
- a substrate including a surface;
- a semiconductor die positioned on the surface of the substrate;
- a solder interconnect structure spaced a distance away from the semiconductor die on the surface of the substrate, the solder interconnect structure defining a height;
- a molding compound disposed adjacent to the solder interconnect structure on the surface of the substrate, wherein an opening is disposed between the solder interconnect structure and the molding compound, so that no portion of the solder interconnect structure is in direct contact with the molding compound;
- the molding compound extending outward a first distance from the surface of the substrate at a position adjacent to the solder interconnect structure;
- and
- the semiconductor die extending outward a second distance from the surface of the substrate, wherein the first distance is less than the second distance.
4 more elements
A structure comprising:
- a substrate;
- a semiconductor die positioned on the substrate;
- a solder interconnect structure spaced a distance away from the semiconductor die on the substrate, the solder interconnect structure defining a height extending outward from the substrate;
- a molding compound disposed adjacent to the solder interconnect structure on the substrate, wherein an opening is disposed between the solder interconnect structure and the molding compound;
- the opening extending the height of the solder interconnect structure;
- the molding compound extending outward a first distance from the substrate at a position adjacent to the solder interconnect structure;
- and
- the semiconductor die extending outward a second distance from the substrate, wherein the first distance is less than the second distance.
5 more elements
A structure comprising:
- a substrate including a top side and a bottom side;
- a semiconductor die positioned on the top side of the substrate;
- a solder interconnect structure spaced a distance away from the semiconductor die on the top side of the substrate;
- a first molding compound region disposed adjacent to the solder interconnect structure on the top side of the substrate, wherein an opening is disposed between the solder interconnect structure and the first molding compound region, so that no portion of the solder interconnect structure is in direct contact with the first molding compound region;
- a second molding compound region disposed over the semiconductor die on the top side of the substrate;
- the first molding compound region including an upper surface spaced a first distance away from the top side of the substrate;
- and
- the semiconductor die including an upper surface spaced a second distance away from the top side of the substrate, wherein the first distance is less than the second distance.
5 more elements
Dependencies are inferred from the claim text.