Insulating protrusion in the trench of a re-distribution layer structure
AssigneeChipMOS Technologies Inc.
InventorEn-Sung Hu
Life of this patent
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AssigneeChipMOS Technologies Inc.
InventorEn-Sung Hu
Estimating the term…
A re-distribution layer structure is adapted to be disposed on a substrate having a pad and a protective layer which has a first opening exposing a part of the pad. The re-distribution layer structure includes a first and a second patterned insulating layers and a re-distribution layer. The first patterned insulating layer is disposed on the protective layer and includes at least one protrusion and a second opening corresponding to the first opening. The re-distribution layer is disposed on the first patterned insulating layer and includes a pad portion and a wire portion. The pad portion is located on the first patterned insulating layer. The wire portion includes a body and at least one trench caved in the body. The body extends from the pad portion to the pad exposed by the first and the second openings. The body covers the protrusion, and the at least one protrusion extends into the at least one trench. The second patterned insulating layer covers the wire portion and exposes a part of the pad portion. A manufacturing method of re-distribution layer structure is further provided.
A re-distribution layer structure, disposed on a substrate, the substrate having a pad and a protective layer, wherein the protective layer has a first opening, the first opening exposes a part of the pad, and the re-distribution layer structure comprises:
A manufacturing method of re-distribution layer, comprising:
Dependencies are inferred from the claim text.