Semiconductor device and method of manufacturing the semiconductor device
AssigneeRenesas Electronics Corporation
InventorAkira Yajima
Life of this patent
Estimating the term…
Abstract
Reliability of a semiconductor device is improved. A slope is provided on a side face of an interconnection trench in sectional view in an interconnection width direction of a redistribution layer. The maximum opening width of the interconnection trench in the interconnection width direction is larger than the maximum interconnection width of the redistribution layer in the interconnection width direction, and the interconnection trench is provided so as to encapsulate the redistribution layer in plan view.
Claims16
A semiconductor device, comprising:
- a first pad;
- an insulating film covering the first pad;
- a first opening exposing part of a surface of the first pad from the insulating film;
- a first polyimide film having a second opening linking with the first opening;
- a second polyimide film having a first interconnection trench linking with the second opening;
- a first interconnection provided in the first opening, the second opening, and the first interconnection trench;
- a third polyimide film covering the first interconnection;
- and
- a third opening exposing part of the first interconnection from the third polyimide film,
- wherein when an interconnection length direction of the first interconnection is defined as first direction, and an interconnection width direction, intersecting with the first direction, of the first interconnection is defined as second direction, a first slope is provided on a side face of the first interconnection trench in sectional view in the second direction, and maximum opening width of the first interconnection trench in the second direction is larger than maximum interconnection width of the first interconnection in the second direction, and
- wherein the first interconnection trench encapsulates the first interconnection in plan view.
The semiconductor device according to claim. I, wherein a side face of the first interconnection is in contact with a bottom of the first interconnection trench.
The semiconductor device according to claim. 5, wherein the end of the first barrier conductor film is in contact with the bottom of the first interconnection trench.
A method of manufacturing a semiconductor device, the method comprising the steps of:
- (a) forming an insulating film covering a first pad;
- (b) forming a first opening in the insulating film, the first opening exposing part of a surface of the first pad;
- (c) forming a first polyimide film over the insulating film;
- (d) forming a second opening in the first polyimide film, the second opening linking with the first opening;
- (e) forming a second polyimide film over the first polyimide film;
- (f) forming a first interconnection trench in the second polyimide film, the first interconnection trench linking with the second opening;
- (g) forming a first interconnection filling the first opening, the second opening, and the first interconnection trench;
- (h) partially etching the first interconnection;
- (i) after the step (h), forming a third polyimide film covering the first interconnection;
- and
- (j) forming a third opening in the third polyimide film, the third opening exposing part of the first interconnection, wherein when an interconnection length direction of the first interconnection is defined as first direction, and an interconnection width direction, intersecting with the first direction, of the first interconnection is defined as second direction, a first slope is formed on a side face of the first interconnection trench in sectional view in the second direction in the step (f), and
- wherein after the step (h), maximum opening width of the first interconnection trench in the second direction is larger than maximum interconnection width of the first interconnection the second direction, and the first interconnection trench encapsulates the first interconnection in plan view.
Dependencies are inferred from the claim text.