Semiconductor device mounting method
AssigneeFujitsu Limited
InventorsHidehiko Kira, Norio Kainuma, Takashi Kubota, Takumi Masuyama
Life of this patent
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Abstract
A first insulating film is applied onto a joining face of a semiconductor device including a connection terminal on a joining face, and the connection terminal is embedded inside the first insulating film. The second insulating film is formed on a joining target face of a joining target, which includes a connection target terminal on the joining target face, and the connection target terminal is embedded inside the second insulating film. The semiconductor device and the joining target are joined together by applying pressure and causing the semiconductor device and the joining target to make contact with each other.
Claims14
A semiconductor device mounting method comprising:
- preparing the semiconductor device, a joining face of which includes a connection terminal;
- preparing a joining target, a joining target face of which includes a connection target terminal;
- applying a first insulating film including a thermosetting resin onto the joining face of the semiconductor device having the connection terminal on the joining face, and embedding the connection terminal inside the first insulating film;
- applying a second insulating film including a thermosetting resin onto the joining target face of the joining target having the connection target terminal on the joining target face, and embedding the connection target terminal inside the second insulating film;
- and
- applying pressure that causes the connection terminal and the connection target terminal to contact each other, while curing the first insulating film and the second insulating film by heating, thereby joining the semiconductor device to the joining target.
A semiconductor device mounting method comprising:
- preparing the semiconductor device, a joining face of which includes a connection terminal;
- preparing a joining target, a joining target face of which includes a connection target terminal;
- applying a first insulating film including a thermosetting resin onto the joining face of the semiconductor device having the connection terminal on the joining face, and embedding the connection terminal inside the first insulating film;
- exposing a leading end of the connection terminal by eliminating a portion of the first insulating film covering the leading end of the connection terminal;
- applying pressure that causes the connection target terminal of the joining target that includes the connection target terminal on the joining target face to contact the connection terminal, while curing the first insulating film by heating, thereby joining the semiconductor device to the joining target;
- and
- applying a second insulating film including a thermosetting resin onto the joining target face of the joining target and embedding the connection target terminal inside the second insulating film;
- and
- exposing a leading end of the connection target terminal by eliminating a portion of the second insulating film covering the leading end of the connection target terminal.
Dependencies are inferred from the claim text.