Fabrication of IC structure with metal plug

A method of forming an integrated circuit (IC) structure, the method comprising:

• providing a structure including a local interconnect (LI) level having an upper surface and a plurality of via openings within the upper surface;
• forming a bulk semiconductor material on the LI level to fill the plurality of via openings, wherein an upper surface of the bulk semiconductor material is positioned over an upper surface of the LI level;
• planarizing the bulk semiconductor material to the upper surface of the LI level, wherein a remaining portion of the bulk semiconductor material within the plurality of via openings defines a plurality of vias, and wherein the planarizing yields a cavity extending from a top surface of one of the plurality of vias to an interior surface of the via, and wherein a portion of the bulk semiconductor material defines at least one sidewall of the cavity;
• forming a metal plug within the cavity to the interior surface of the via, such that the metal plug conformally contacts a sidewall of the cavity and the interior surface of the via, wherein the metal plug is laterally distal to an exterior sidewall of the via;
• and
• forming a first metal level on the structure, such that a contact within a first metal level of the first metal level is electrically coupled to the metal plug.