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US 9,793,207 B1Granted
Electrical antifuse including phase change material
AssigneeInternational Business Machines Corporation
InventorChih-Chao Yang
Life of this patent
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Abstract
An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further includes an antifuse material layer comprising a phase change material alloy of tantalum and nitrogen. A first surface of the antifuse material layer is present in direct contact with the first electrode. A second electrode is present in direct contact with a second surface of the antifuse material layer that is opposite the first surface of the antifuse material layer.
Claims15
An antifuse structure comprising:
- a first electrically conductive material that is present within an opening in a dielectric material;
- an antifuse material layer present within the opening in the dielectric, the antifuse material layer comprising a phase change material alloy of tantalum and nitrogen, wherein at least one surface of the antifuse material layer is present in direct contact with the first electrically conductive material;
- and
- a second electrically conductive material in direct contact with at least the antifuse material layer, the second electrically conductive material over the opening.
1 more element
A device comprising:
- an interlevel dielectric layer atop an electrical device, wherein an opening extends through interlevel dielectric layer to a contact surface of the electrical device;
- a diffusion barrier present on sidewalls and a base of the opening;
- an antifuse material layer present within the opening in the interlevel dielectric, the antifuse material layer comprising a phase change material alloy of tantalum and nitrogen, wherein the antifuse material layer fills an entirety of the opening on the diffusion barrier;
- and
- an electrically conductive material in direct contact with at least the antifuse material layer, the electrically conductive material layer extending over the antifuse material layer and the interlevel dielectric layer.
2 more elements
Dependencies are inferred from the claim text.