Method of manufacturing semiconductor structure comprising plurality of through holes using metal hard mask

A method for manufacturing a semiconductor structure comprising:

• forming a first portion of a dielectric layer to conceal a conductive structure;
• removing some of the first portion of the dielectric layer to expose a top surface of the conductive structure;
• forming a second portion of the dielectric layer over the first portion of the dielectric layer and over the top surface of the conductive structure;
• forming a metal hard mask directly on the dielectric layer without performing a degas process between the forming the second portion of the dielectric layer and the forming the metal hard mask;
• patterning the metal hard mask;
• patterning the first portion of the dielectric layer and the second portion of the dielectric layer to define a first through hole extending through the first portion of the dielectric layer and the second portion of the dielectric layer;
• and
• patterning the second portion of the dielectric layer to define a second through hole extending through the second portion of the dielectric layer.

A method for manufacturing a semiconductor structure comprising:

• forming a dielectric layer on a conductive structure, wherein the forming the dielectric layer comprises:
• forming a first portion of the dielectric layer to conceal the conductive structure;
• removing some of the first portion of the dielectric layer to expose a top surface of the conductive structure;
• and
• forming a second portion of the dielectric layer over the first portion of the dielectric layer and over the top surface of the conductive structure;-and
• forming a metal hard mask on the dielectric layer without performing a degas process between the forming the dielectric layer and the forming the metal hard mask to provide that, at an initialization of the forming the metal hard mask, the dielectric layer has a temperature of less than about 30° C.;
• patterning the metal hard mask;
• and
• patterning the dielectric layer with the patterned metal hard mask to form a first through hole extending through the first portion of the dielectric layer and the second portion of the dielectric layer and a second through hole extending merely through the second portion of the dielectric layer.