Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsAkira Matsumoto, Yoshinao Miura, Yasutaka Nakashiba
Life of this patent
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Abstract
Disclosed is a semiconductor device in which a resistance component resulting from wiring is reduced. A plurality of transistor units are arranged side by side in a first direction, each of which has a plurality of transistors. The gate electrodes of the transistors extend in the first direction. First source wiring extends between first transistor unit and second transistor unit, and first drain wiring extends between the second transistor unit and third transistor unit. Second drain wiring extends on the side of the first transistor unit opposite to the side where the first source wiring extends, and second source wiring extends on the side of the third transistor unit opposite to the side where the second drain wiring extends.
Claims16
A semiconductor device comprising:
- a plurality of transistor units including first, second and third transistor units arranged in a first direction in this order, each transistor unit having a plurality of transistors that are coupled to each other along a second direction intersecting the first direction;
- a source wiring having a first portion extending along the second direction, second portions and third portions each extending along the first direction,
- wherein the source wiring is shared by first and second transistor units,
- wherein the second portions and third portions are connected to the first portion, and
- wherein the second portions are coupled to the transistors in the first transistor unit, and the third portions are coupled to the transistors in the second transistor unit;
- a drain wiring having a fourth portion extending along the second direction, fifth portions and sixth portions each extending along the first direction,
- wherein the drain wiring is shared by second and third transistor units,
- wherein the fifth portions and sixth portions are connected to the fourth portion, and
- wherein the fifth portions are coupled to the transistors in the second transistor unit, and the sixth portions are coupled to the transistors in the third transistor unit;
- a source pad electrode extending in the second direction and overlapping a portion of the first portion via an insulating film, the source pad electrode being coupled to the first portion of the source wiring;
- and
- a drain pad electrode extending in the second direction and overlapping a portion of the fourth portion via the insulating film, the drain pad electrode being coupled to the fourth portion of the drain wiring;
- wherein the source pad electrode and the drain pad electrode are arranged in the first direction.
Dependencies are inferred from the claim text.