Sensor for a semiconductor device

A semiconductor arrangement, comprising:

• a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type;
• a first load contact electrically coupled to the semiconductor body and a second load contact electrically coupled to the semiconductor body, the semiconductor drift region being arranged for conducting a load current between the first load contact and the second load contact in an active region of the semiconductor body;
• a plurality of semiconductor drain regions arranged at least partially internal of the semiconductor body between said active region of the semiconductor body and a non-active region of the semiconductor body, wherein each of the plurality of semiconductor drain regions is in contact with the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type, and wherein the plurality of semiconductor drain regions comprises a first semiconductor drain region acting as a first semiconductor sense region, a second semiconductor drain region acting as a second semiconductor sense region, and at least one third semiconductor drain region, the at least one third semiconductor drain region being electrically connected to the first load contact and being configured for draining charge carriers from the semiconductor drift region;
• a first metal contact comprising a first metal material, the first metal contact being separated from the first load contact and the second load contact and in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition;
• a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first load contact, the second load contact, and the first metal contact, and being in contact with second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition.

A method for determining a physical parameter of a semiconductor device, wherein the semiconductor device comprises:

• a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type;
• a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type;
• a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition;
• a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition;
• wherein the method comprises:
• deriving a first sense signal from an electrical parameter of the first metal contact, wherein the electrical parameter of the first metal contact comprises at least one of an electrical potential of the first metal contact and a current through the first metal contact;
• deriving a second sense signal from an electrical parameter of the second metal contact, wherein the electrical parameter of the second metal contact comprises at least one of an electrical potential of the second metal contact and a current through the second metal contact;
• determining a value of said physical parameter of the semiconductor device in dependence of the first sense signal and the second sense signal, said value being indicative for at least one of a temperature of the semiconductor body and a load current conducted by the semiconductor body.