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US 9,793,175 B2Granted
FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang
Life of this patent
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Abstract
FinFET devices are formed on the same semiconductor structure wherein at least one finFET device has a gate dielectric structure that is different in thickness relative to a gate dielectric structure of at least one other finFET device. The finFET devices are formed as part of the same fabrication process.
Claims18
A semiconductor device, comprising:
- a first finFET device formed on a substrate structure having a top surface wherein the first finFET device comprises a first gate dielectric structure having a first thickness;
- and
- a second finFET device formed on the substrate structure wherein the second finFET device comprises a second gate dielectric structure having a second thickness;
- wherein the first thickness and the second thickness are different, and the first finFET device and the second finFET device are formed as part of the same fabrication process;
- and
- wherein the first and second finFET devices further comprise:
- respective fin structures on the substrate structure, wherein the respective fin structures have a top surface and sidewalls and further wherein a high-k dielectric layer is on the top surface and sidewalls of the respective fin structures and on at least a portion of the top surface of the substrate structure;
- respective pairs of spacers proximate to the respective fin structures and on the substrate structure;
- and
- inner-layer dielectric layers adjacent to the respective pairs of spacers and on the substrate structure wherein the respective pairs of spacers and inner-layer dielectric layers are of different material.
7 more elements
A semiconductor device, comprising:
- a first finFET device formed on a substrate structure having a top surface wherein the first finFET device comprises a first gate dielectric structure comprising n+1 high-k dielectric layers, wherein n is equal to or greater than one;
- and
- a second finFET device formed on the substrate structure wherein the second finFET device comprises a second gate dielectric structure comprising n high-k dielectric layers;
- wherein the first finFET device and the second finFET device are formed as part of the same fabrication process;
- and
- wherein the first and second finFET devices further comprise:
- respective fin structures on the substrate structure, wherein the respective fin structures have a top surface and sidewalls and further wherein a high-k dielectric layer is on the top surface and sidewalls of the respective fin structures and on at least a portion of the top surface of the substrate structure;
- respective pairs of spacers proximate to the respective fin structures and on the substrate structure;
- and
- inner-layer dielectric layers adjacent to the respective pairs of spacers and on the substrate structure wherein the respective pairs of spacers and inner-layer dielectric layers are of different material.
7 more elements
Dependencies are inferred from the claim text.