Semiconductor device and related manufacturing method
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorDeyuan Xiao
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a substrate, an n-channel field-effect transistor positioned on the substrate, and a p-channel field-effect transistor positioned on the substrate. The n-channel field-effect transistor may include an n-type silicide source portion, an n-type silicide drain portion, and a first n-type channel region. The first n-type channel region may be positioned between the n-type silicide source portion and the n-type silicide drain portion and may directly contact each of the n-type silicide source portion and the n-type silicide drain portion.
Claims11
A semiconductor device comprising:
- a substrate;
- an n-channel field-effect transistor positioned on the substrate, wherein the n-channel field-effect transistor comprises an n-type silicide source portion, an n-type silicide drain portion, and a first n-type channel region, wherein a doping concentration value at a surface portion of the first n-type channel region is higher than a doping concentration value at an inner portion of the first n-type channel region, and wherein the first n-type channel region is positioned between the n-type silicide source portion and the n-type silicide drain portion and directly contacts each of the n-type silicide source portion and the n-type silicide drain portion;
- and
- a p-channel field-effect transistor positioned on the substrate.
A semiconductor device comprising:
- a substrate;
- an n-channel field-effect transistor positioned on the substrate, wherein the n-channel field-effect transistor comprises an n-type source portion, an n-type drain portion, and a first n-type channel region, and wherein the first n-type channel region is positioned between the n-type source portion and the n-type drain portion and directly contacts each of the n-type source portion and the n-type drain portion;
- and
- a p-channel field-effect transistor positioned on the substrate, wherein the p-channel field-effect transistor comprises a first p-type source portion, a second p-type source portion, a first p-type drain portion, a second p-type drain portion, and a second n-type channel region, wherein the second n-type channel region is positioned between the first p-type source portion and the first p-type drain portion, wherein the first p-type source portion and the first p-type drain portion are positioned between the second p-type source portion and the second p-type drain portion, and wherein a doping concentration value of the first p-type source portion is less than a doping concentration value of the second p-type source portion.
Dependencies are inferred from the claim text.