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US 9,793,170 B2Granted
Semiconductor device and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsChia Chang Hsu, Chun-Hsien Lin
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Abstract
A semiconductor device includes a substrate, a first gate structure on the substrate, a first spacer adjacent to the first gate structure, a lower contact plug adjacent to the first gate structure and contact the first spacer, and a first overhang feature disposed on an upper end of the first spacer.
Claims12
A semiconductor device, comprising:
- a substrate;
- a first gate structure on the substrate;
- a first spacer adjacent to the first gate structure;
- a lower contact plug adjacent to the first gate structure and contacting the first spacer;
- a first overhang feature disposed on the first spacer, wherein the first overhang feature is in direct contact with the first spacer only at an upper end of the first spacer, and a top surface of the first overhang feature is coplanar with a top surface of the first gate structure by having a polished surface thereof made by a chemical mechanical polishing (CMP) process;
- and
- an upper contact plug disposed directly above the lower contact plug, wherein a concave interface between the upper contact plug and the lower contact plug abuts the top surface of the first overhang feature.
4 more elements
Dependencies are inferred from the claim text.