Semiconductor structure with self-aligned wells and multiple channel materials

A method of forming a semiconductor structure, comprising:

• forming a p-doped, stress relaxed epitaxial first silicon germanium layer having a first germanium concentration onto a semiconductor substrate;
• depositing a tensile strained epitaxial second silicon germanium layer having a second germanium concentration onto the first silicon germanium layer, wherein the second germanium concentration is lower than the first germanium concentration;
• removing a portion of the second silicon germanium layer over a first region to create exposed regions of the thereby forming a preserved while preserving a portion of the second silicon germanium layer over a second region;
• counterdoping to n-type the exposed regions of the first silicon germanium layer that are not covered by the second silicon germanium layer;
• selectively depositing a compressively strained, epitaxial third silicon germanium layer in the first region, the third silicon germanium layer having a third germanium concentration that is higher than the first germanium concentration;
• and
• forming a plurality of shallow trench isolation regions in the first region and the second region of the second silicon germanium layer.