Method for forming a wafer structure, a method for forming a semiconductor device and a wafer structure
AssigneeInfineon Technologies AG
InventorsRoland Rupp, Wolfgang Lehnert, Francisco Javier Santos Rodriguez
Life of this patent
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Abstract
A method of producing a semiconductor device and a wafer structure are provided. The method includes attaching a donor wafer comprising silicon carbide to a carrier wafer comprising graphite, splitting the donor wafer along an internal delamination layer so that a split layer comprising silicon carbide and attached to the carrier wafer is formed, removing the carrier wafer above an inner portion of the split layer while leaving a residual portion of the carrier wafer attached to the split layer to form a partially supported wafer, and further processing the partially supported wafer.
Claims15
A method for forming a semiconductor device, comprising:
- attaching a donor wafer comprising silicon carbide to a carrier wafer comprising graphite;
- splitting the donor wafer along an internal delamination layer so that a split layer comprising silicon carbide and attached to the carrier wafer is formed;
- forming a partially supported wafer comprising removing the carrier wafer above an inner portion of the split layer while leaving a residual portion of the carrier wafer attached to the split layer;
- and
- further processing the partially supported wafer.
A method for forming a wafer structure, comprising:
- providing a silicon carbide wafer having a first side;
- implanting high energy particles from the first side into the silicon carbide wafer;
- bonding the first side of the silicon carbide wafer to a carrier wafer comprising graphite;
- splitting a first layer from the silicon carbide wafer;
- and one of:
- removing the carrier wafer above an inner portion of the first layer to form at the first layer a support structure only partly covering the first layer;
- and
- removing the carrier wafer after depositing a silicon carbide layer on the split layer and forming a support structure at the silicon carbide layer and only partly covering the silicon carbide layer.
Dependencies are inferred from the claim text.