Methods of fabricating semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsSeyoung Jeong, Taeje Cho, Hogeon Song, Kyu-Ha Lee
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Abstract
A method of fabricating a semiconductor device is provided. The method may include preparing a substrate having a first surface and a second surface, forming a via hole exposing at least a portion of the substrate from the first surface of the substrate, forming a first insulating film on an inner wall of the via hole, forming a conductive connection part filling an inside of the via hole including the first insulating film, polishing the second surface of the substrate until the conductive connection part is exposed, and selectively forming a second insulating film on the second surface of the substrate using an electrografting method to expose the conductive connection part.
Claims10
A method of fabricating a semiconductor device comprising:
- preparing a substrate having a first surface and a second surface;
- forming a via hole exposing at least a portion of the substrate from the first surface of the substrate;
- forming a first insulating film on an inner wall of the via hole;
- forming a conductive connection part filling an inside of the via hole including the first insulating film;
- polishing the second surface of the substrate until the conductive connection part is exposed;
- and
- selectively forming a second insulating film on the second surface of the substrate except for the exposed conductive connection part, wherein an end of the second insulating film extends beyond an edge of the inner wall of the via hole toward the conductive connection part, and
- wherein forming the second insulating film is performed using an electrografting method.
A method of fabricating a semiconductor device comprising:
- preparing a substrate having an integrated circuit;
- forming a pad on a top surface of the substrate, wherein the pad is connected to the integrated circuit;
- forming a via hole through the top surface of the substrate at a predetermined depth;
- forming a first insulating film on an inner wall of the via hole;
- forming a conductive connection part that fills the via hole and extends on the top surface to be connected to the pad;
- exposing the conductive connection part;
- and
- forming a second insulating film on a bottom surface of the substrate except for the exposed connection part,
- wherein an end of the second insulating film extends toward the conductive connection part,
- wherein the first insulating film extends beyond the bottom surface of the substrate past the conductive connection part, and
- wherein forming the second insulating film is performed using an electrografting method.
Dependencies are inferred from the claim text.