Staggered via redistribution layer (RDL) for a package and a method for forming the same

A method of forming a semiconductor device, the method comprising:

• forming a conductive element;
• and
• forming a staggered redistribution layer over the conductive element, the staggered redistribution layer comprising a plurality of insulating layers and a plurality of conductive features, each of the plurality of conductive features being interposed between adjacent ones of the plurality of insulating layers, each of the conductive features of the plurality of conductive features extending through a plurality of openings in an underlying insulating layer of the plurality of insulating layers, wherein the plurality of openings in adjacent ones of the plurality of openings being non-overlapping in a plan view, and wherein a lowermost insulating layer of plurality of insulating layers has a plurality of openings exposing the conductive element, the conductive element extending continuously between the plurality of openings.

A semiconductor device comprising:

• a first conductive feature over a first insulating layer, the first conductive feature having a first plurality of conductive vias, each of the first plurality of conductive vias being electrically coupled to a same conductive element;
• and
• a second conductive feature having a second plurality of conductive vias, each of the second plurality of conductive vias electrically coupled to the first conductive feature, each of the second plurality of conductive vias being laterally offset from all of the first plurality of conductive vias in a plan view.