Method of cyclic dry etching using etchant film
AssigneesASM IP Holding B.V., National University Corporation
InventorsMasaru Zaitsu, Nobuyoshi Kobayashi, Akiko Kobayashi, Masaru Hori, Hiroki Kondo, Takayoshi Tsutsumi
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Abstract
A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.
Claims18
A method for etching a target layer on a substrate by a dry etching process which comprises at least one etching cycle, wherein an etching cycle comprises:
- (i) depositing a halogen-containing film using reactive species on the target layer on the substrate, wherein the halogen-containing film and the target layer are in contact with each other;
- and
- (ii) (1) etching the halogen-containing film using a plasma of a non-halogen etching gas without etching the target layer, which plasma alone does not substantially etch the target layer, and thereby (2) generating etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.
Dependencies are inferred from the claim text.