Method for processing object to be processed
AssigneeTokyo Electron Limited
InventorsJun Sato, Eiichi Nishimura
Life of this patent
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Abstract
In a method according to one embodiment, a first processing gas is supplied into a processing container of a plasma processing apparatus, and a plasma of the first processing gas is generated to etch an upper magnetic layer by the plasma of the first processing gas. Subsequently, a deposit, which is generated due to the etching of the upper magnetic layer, is removed. The removal of the deposit includes allowing a reduction reaction to occur in the deposit by a plasma of a second processing gas that contains H2 gas, and removing a product, which is generated by the reduction reaction, by using a third processing gas that contains hexafluoroacetylacetone.
Claims6
A method for processing a workpiece which includes a lower magnetic layer, an insulating layer provided on the lower magnetic layer, an upper magnetic layer provided on the insulating layer, and a mask provided on the upper magnetic layer, the method comprising:
- etching the upper magnetic layer, said etching the upper layer including supplying a first processing gas into a processing container of a plasma processing apparatus, and generating a plasma of the first processing gas to etch the upper magnetic layer by the plasma of the first processing gas;
- and
- removing a deposit that is formed on the workpiece due to said etching the upper magnetic layer,
- wherein said removing the deposit includes,
- allowing a reduction reaction to occur in the deposit by a plasma of a second processing gas containing H2 gas, and
- removing a product, which is generated by the reduction, by using a third processing gas containing hexafluoroacetylacetone.
Dependencies are inferred from the claim text.