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US 9,793,125 B2Granted
SONOS stack with split nitride memory layer
AssigneeCypress Semiconductor Corporation
InventorsFredrick B. Jenne, Krishnaswamy Ramkumar
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Abstract
A semiconductor device includes a polysilicon substrate, a first oxide layer formed on the polysilicon substrate, an oxygen-rich nitride layer formed on the first oxide layer, a second oxide layer formed on the oxygen-rich nitride layer, and an oxygen-poor nitride layer formed on the second oxide layer.
Claims5
A method of manufacturing a semiconductor device, comprising:
- forming a first oxide layer on a substrate;
- forming a nitride layer on the first oxide layer;
- forming a middle oxide layer inside the nitride layer;
- forming a second oxide layer on the nitride layer, wherein the second oxide layer includes high-temperature-oxide (HTO) deposited using chemical vapor deposition (CVD) process;
- and
- forming a control gate over the second oxide layer.
3 more elements
Dependencies are inferred from the claim text.