Semiconductor structures

A semiconductor structure, comprising:

• a stack of alternating tier dielectric materials and tier control gates;
• a floating gate material laterally adjacent to each of the tier control gates;
• a charge blocking structure vertically between the floating gate material and a respective adjacent tier control gate;
• a conductive material horizontally between and directly contacting the floating gate material and a respective adjacent tier dielectric material;
• and
• a channel material extending through the stack of alternating tier dielectric materials and tier control gates.

A semiconductor structure, comprising:

• a stack of alternating tier dielectric materials and tier control gates;
• a floating gate material laterally adjacent to each of the tier control gates;
• a charge blocking material vertically between each of the floating gate materials and an adjacent tier control gate, the charge blocking material comprising a first dielectric material directly on a vertical sidewall of the tier control gate, a second dielectric material directly on the first dielectric material, and a third dielectric material between and directly on the second dielectric material and the floating gate materials;
• a fourth dielectric material horizontally between each of the floating gate materials and an adjacent tier dielectric material, the third dielectric material contacting only vertical surfaces of the second dielectric material, contacting only vertical surfaces of the floating gate materials, and contacting only horizontal surfaces of the fourth dielectric material;
• and
• a channel material extending through the stack of alternating tier dielectric materials and tier control gates.