Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsTakuya Joda, Toru Kakuda, Masahisa Okuno, Hideto Tateno
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Abstract
To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.
Claims11
A method of manufacturing a semiconductor device comprising:
- loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking;
- supplying oxygen-containing gas to the substrate at a first temperature not higher than a temperature of the pre-baking;
- and
- supplying processing gas containing at least any one of steam or hydrogen peroxide to the substrate at a second temperature higher than the first temperature, where supplying processing gas is performed after supplying oxygen-containing gas;
- and
- annealing in which supply of the processing gas and the oxygen-containing gas is stopped and nitrogen-containing gas is supplied, after the supplying processing gas.
A non-transitory computer-readable recording medium configured to record a program to be executed by a computer, the program including procedures of:
- loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking;
- supplying oxygen-containing gas to the substrate at a first temperature not higher than a temperature of the pre-baking;
- and
- supplying processing gas containing at least any one of steam or hydrogen peroxide to the substrate at a second temperature higher than the first temperature, where supplying processing gas is performed after supplying oxygen-containing gas;
- and
- annealing in which supply of the processing gas and the oxygen-containing gas is stopped and nitrogen-containing gas is supplied, after supplying processing gas.
A method of manufacturing a semiconductor device comprising:
- loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking;
- supplying oxygen-containing gas to the substrate at a first temperature not higher than a temperature of the pre-baking;
- and
- supplying processing gas containing at least any one of steam or hydrogen peroxide to the substrate at a second temperature higher than the first temperature;
- exhausting the inside of the processing container while keeping the temperature of the substrate, after supplying processing gas;
- and
- cooling the substrate after supplying inert gas into the processing container while keeping the temperature of the substrate until a pressure of the inside of the processing container reaches a predetermined pressure, after exhausting the inside of the processing container.
Dependencies are inferred from the claim text.