Interconnect integration for sidewall pore seal and via cleanliness
AssigneeApplied Material, Inc.
InventorsHe Ren, Mehul B. Naik, Deenesh Padhi, Priyanka Dash, Bhaskar Kumar, Alexandros T. Demos
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Abstract
A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.
Claims19
A method, comprising:
- exposing a substrate to UV radiation and a first reactive gas comprising NH3, wherein the substrate has an open feature defined therein, the open feature defined by exposed surfaces of a porous low-k dielectric layer and an exposed upper surface of a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material, wherein the exposing a substrate to UV radiation and a first reactive gas increases the hydrophobicity of the exposed upper surface of the conductive material relative to the exposed surfaces of the porous low-k dielectric layer, wherein the exposed upper surface of the conductive material defines a bottom surface of the open feature, and wherein the exposed surfaces of the porous low-k dielectric layer define a sidewall of the open feature;
- and
- selectively forming a pore sealing layer in the open feature on the UV treated exposed surfaces of the porous low-k dielectric layer and forming a pore sealing residue on the UV treated exposed upper surface of the conductive material using a UV assisted photochemical vapor deposition, wherein the pore sealing layer and the pore sealing residue are a silicon-carbon-nitrogen based film, and wherein a deposition rate of the pore sealing layer on the UV treated exposed surfaces of the porous low-k dielectric layer of the open feature is greater than a deposition rate of the pore sealing residue on the UV treated exposed upper surface of the conductive material of the open feature.
A method, comprising:
- exposing a substrate to UV radiation and an NH3 precursor, wherein the substrate has a trench and via defined therein, the trench and via defined by exposed surfaces of a porous low-k dielectric layer and an exposed upper surface of a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material, wherein the exposing a substrate to UV radiation and an NH3 precursor increases the hydrophobicity of the exposed upper surface of the conductive material relative to the exposed surfaces of the porous low-k dielectric layer, and wherein the exposed upper surface of the conductive material defines a bottom surface of the via;
- selectively forming a pore sealing layer on the UV treated exposed surfaces of the porous low-k dielectric layer in the via and forming a pore sealing residue on the UV treated exposed upper surface of the conductive material at the bottom of the via using a UV assisted photochemical vapor deposition, wherein the pore sealing layer and the pore sealing residue are a silicon-carbon-nitrogen based film;
- and
- exposing the substrate to a post-deposition treatment process to remove pore sealing residue from the exposed upper surface of the conductive material of the via, wherein a deposition rate of the pore sealing layer on the exposed surfaces of the porous low-k dielectric layer is greater than a deposition rate of the pore sealing residue on the exposed upper surface of the conductive material.
Dependencies are inferred from the claim text.