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US 9,793,104 B2Granted
Preparing a semiconductor surface for epitaxial deposition
AssigneeAixtron SE
InventorsMaxim Kelman, Shahab Khandan, Scott Dunham, Tac van Huynh, Kenneth B. K. Teo
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Abstract
Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.
Claims20
A method of epitaxial deposition comprising
- a) obtaining a semiconductor substrate having i) a bulk semiconductor and ii) a surface oxide layer over the bulk semiconductor;
- b) dry-etching the substrate with a fluorine containing species to remove the surface oxide layer and thereby expose a surface of the bulk semiconductor;
- c) exposing the surface of the bulk semiconductor to hydrogen atoms;
- and
- d) then epitaxially depositing a semiconductor layer on the surface of the bulk semiconductor.
2 more elements
Dependencies are inferred from the claim text.