Microwave surface-wave plasma device

A plasma processing system comprising:

• a plasma chamber including an upper sidewall;
• a substrate holder to support a substrate;
• an annular power transmission element supported on top of the upper sidewall and surrounding the substrate holder, the power transmission element comprising at least a first opening that is a continuous annular slit and a second opening that is a continuous annular slit, the second opening positioned above the first opening along an inner side of the power transmission element;
• a power source that can provide a power signal to the power transmission element that enables the system to generate a plasma;
• a first dielectric component arranged to cover first opening in the power transmission element;
• and
• a second dielectric component arranged to cover the second opening,
• wherein the first dielectric component and the second dielectric component are separated from each other, and
• wherein the first and second dielectric components are each configured to transmit at least a portion of the power signal received through the first and second openings,
• wherein the power transmission element includes an interior cavity, and the first and second openings are located on a side wall that is perpendicular to the substrate holder.