Techniques and apparatus for manipulating an ion beam
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsJames S. Buff, Victor Benveniste, Frank Sinclair
Life of this patent
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Abstract
A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.
Claims19
A method, comprising:
- generating an ion beam from an ion source, the ion beam having an initial direction of propagation;
- deflecting the ion beam at an initial average angle of inclination with respect to the initial direction of propagation;
- passing the ion beam through a magnetic assembly, the magnetic assembly including an aperture;
- and
- generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.
An apparatus to manipulate an ion beam, comprising:
- a deflector to receive an ion beam having an initial direction of propagation and to deflect the ion beam along an initial average angle of inclination with respect to the initial direction of propagation;
- a magnetic assembly disposed downstream to the deflector, the magnetic assembly including an aperture to receive the ion beam and further comprising:
- a magnetic yoke;
- and
- a coil assembly, the coil assembly comprising a first coil disposed along a first side of the magnetic yoke, and a second coil disposed along a second side of the magnetic yoke opposite the first side;
- a first current supply coupled to the first coil and a second current supply coupled to the second coil;
- and
- an ion beam controller electrically coupled to the deflector and to the first current supply and the second current supply, the ion beam controller directing a first control signal to the first current supply and second control signal to the second current supply, wherein the first coil and second coil simultaneously generate a magnetic dipole field and a magnetic quadrupole field within the aperture.
An ion implanter, comprising:
- an ion source having an elongated aperture to generate a ribbon beam having an elongated cross-section and further having an initial direction of propagation;
- a deflector to receive the ribbon beam and to deflect the ribbon beam along an initial average angle of inclination with respect to the initial direction of propagation;
- a magnetic assembly disposed downstream to the deflector, the magnetic assembly including an aperture to receive the ribbon beam and further comprising:
- a magnetic yoke;
- and
- a coil assembly, the coil assembly comprising a first coil disposed along a first side of the magnetic yoke, and a second coil disposed along a second side of the magnetic yoke opposite the first side;
- a first current supply coupled to the first coil and a second current supply coupled to the second coil;
- and
- an ion beam controller electrically coupled to the deflector and to the first current supply and the second current supply, the ion beam controller directing a first control signal to the first current supply and second control signal to the second current supply, wherein the first coil and second coil simultaneously generate a magnetic dipole field and a magnetic quadrupole field within the aperture.
Dependencies are inferred from the claim text.